6ES7321-1FF01-0AA0

6ES7321-1FF01-0AA0直接驅動方法表現出的整體開關損耗低，為9.02mJ。與其他兩種方法相比，這種方法需要負壓才能驅動SiC JFET，并且需要在電路啟動時為Si MOS提供啟用信號，從而增加了柵極驅動的復雜性。標準UnitedSiC FET不提供到JFET柵極的通路，但是新的雙柵極TO247-4L產品正在開發中，既有SiC JFET柵極和Si MOS柵極，又適合JFET柵極驅動。這種方法還適合模塊，可以添加單獨的JFET柵極引腳。如此項研究所示，JFET柵極路徑可忍受合理的寄生電感（在SPICE中為20nH），因此可以將JFET柵極驅動器放置在模塊頂部的柵極驅動電路板上。   外部CGD和器件RC緩沖電路方法表現出了較高的開關損耗，但是它們不需要到JFET柵極的通路。當在獨立封裝（如TO247）中使用UnitedSiC FET時，兩種方法都可以輕松實施到電路板上。由于這兩種方法可以忍受合理的寄生電感（在SPICE中為20nH），它們還適合內部有UnitedSiC芯片的模塊。   RC緩沖電路方法的一個缺點是它不能分別調整關閉和打開dV/dt。如表1所示，要實現8V/ns的打開dV/dt，關閉dV/dt降低至4V/ns，這會提高EOFF。   然而，外部CGD和JFET直接驅動方法使用單獨的RGON和RGOFF，可以分別調整這二者。

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